Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling
نویسندگان
چکیده
128 978-3-901578-29-8 Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Vito Šimonka, Georg Nawratil, Andreas Hössinger, Josef Weinbub, Siegfried Selberherr Christian Doppler Laboratory for High Performance TCAD at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria Institute of Discrete Mathematics and Geometry, TU Wien, Wiedner Hauptstraße 8-10, 1040 Wien, Austria Silvaco Europe Ltd., Compass Point, St Ives, Cambridge, PE27 5JL, United Kingdom Email: [email protected]
منابع مشابه
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute threedimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4Hand 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known grow...
متن کاملFinite Element Modeling of the Vibrational Behavior of Single-Walled Silicon Carbide Nanotube/Polymer Nanocomposites
The multi-scale finite element method is used to study the vibrational characteristics of polymer matrix reinforced by single-walled silicon carbide nanotubes. For this purpose, the nanoscale finite element method is employed to simulate the nanotubes at the nanoscale. While, the polymer is considered as a continuum at the larger scale. The polymer nanotube interphase is simulated by spring ele...
متن کاملOxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(0001̄) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also i...
متن کاملReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation.
We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation of a-, C,- m-, and Si-crystallographic faces is studied at typical industry-focused temperatures in the range from 900 to 1200 °C based on the time evolution of the oxidation mechanism. The oxide thicknesses and the growth rates are obta...
متن کاملEffect of increasing corundum on mechanical properties of silicon carbide refractories
Oxide materials such as Al2O corundum has a great influence on the mechanical and oxidation properties of refractory or refractory materials. In this paper, the effect of Al2O3 powder density, apparent porosity, linear shrinkage, and oxidation resistance of SiC composite refractory materials is investigated. Meanwhile, the compressive and flexural strengths were investigated before and after he...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016